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ISSN Online: 2377-424X

ISBN Print: 0-85295-345-3

International Heat Transfer Conference 10
August, 14-18, 1994, Brighton, UK

LARGE-SCALE SIMULATION OF THE CZOCHRALSKI GROWTH OF SILICON CRYSTALS

Get access (open in a dialog) DOI: 10.1615/IHTC10.1820
pages 189-203

Abstract

The Czochralski (CZ) method for crystal growth from the melt is the primary system used for manufacturing the large-diameter, silicon crystals used as substrates for microelectronic and optoelectronic devices. Large-scale simulations of heat transfer, convection in the melt, impurity incorporation into the crystal and of the link between these predictions and crystal quality have the potential to improve drastically the performance of these systems and to supply rational designs for the next generation of equipment for the growth of even larger crystals. The status of large-scale simulation of CZ systems is reviewed here with an emphasis placed on linking these predictions to the physical process. Perspectives are presented on the impact of these simulations on the design and operation of CZ systems.