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ISSN Online: 2377-424X

ISBN Print: 978-1-56700-474-8

ISBN Online: 978-1-56700-473-1

International Heat Transfer Conference 16
August, 10-15, 2018, Beijing, China

THERMAL CONDUCTANCE MEASUREMENT OF Al-SiC INTERFACE AT 4-300K USING TIME-DOMAIN THERMOREFLECTANCE TECHNIQUE

Get access (open in a dialog) DOI: 10.1615/IHTC16.tpm.022798
pages 8826-8833

Abstract

Interfacial thermal transport across metal and semiconductor interfaces is of critical importance to a wide variety of electronic devices, which need to operate in low temperature and vacuum environment. Extreme conditions make it difficult for contact approaches to measure, therefore, noncontact measurement techniques which are based on photothermal phenomena are in demand. In this paper, thermal conductance of aluminum (100 nm) and silicon carbide crystals (6H-SiC) interface has been measured over the temperature range of 4-300 K using femtosecond laser pump-probe time domain thermoreflectance method. In the measurement, an accurate data analysis method, relying on the amplitude signals of the lock-in amplifier, is proposed. The results show that the thermal conductance of the Al-SiC interface is strongly dependent on temperature. The interface thermal conductance at room temperature and 4 K are 130 MWm-2K-1 and 0.6 MWm-2K-1, respectively, with three order-of-magnitude differences. It can be interpreted that lattice vibrations at low temperature are so weak that only a spot of phonons can be motivated in the materials. Furthermore, the diffuse mismatch model for phonon transport is employed to predict the temperature dependence of the interface thermal conductance, the theoretical results agree well with the measurements.