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International Heat Transfer Conference 16

ISSN: 2377-424X (online)
ISSN: 2377-4371 (flashdrive)

HIGH THERMAL CONDUCTIVITY THIN FILM FOR HEAT SPREADING ENHANCEMENT IN MICROELECTRONIC MEASURED USING SHORT PULSED PHOTOTHERMAL TECHNIQUE

M. Rammal
Institut des Matériaux Jean Rouxel, CNRS, 2 Rue de la Houssinière 44322 Nantes, France

Bertrand Garnier
Laboratoire de Thermique et Energie de Nantes, CNRS, Polytech'Nantes, BP50609 44306 Nantes, France

P. Jayapragasam
Laboratoire de Thermique et Energie de Nantes, CNRS, Polytech'Nantes, BP50609 44306 Nantes, France

C. Rodiet
Institut d'Électronique et des Systèmes (IES), UMR 5214, 860 Rue St – Priest, 34095 Montpellier, France; EPF, 21 boulevard Berthelot, 34000 Montpellier, France

B. E. Belkerk
Laboratoire de Microsystmes et Instrumentation (LMI), Université Constantine 1, Faculté des Sciences de la Technologie, Constantine 25017, Algeria

J. Camus
Institut des Matériaux Jean Rouxel, CNRS, 2 Rue de la Houssinière 44322 Nantes, France

M. A. Djouadi
Institut des Matériaux Jean Rouxel, CNRS, 2 Rue de la Houssinière 44322 Nantes, France

DOI: 10.1615/IHTC16.nmt.024428
pages 7099-7106


KEY WORDS: Thermophysical properties, Nano/Micro scale measurement and simulation, Thin film, thermal conductivity, aluminum nitride, pulsed photothermal technique, microelectronic

Abstract

Due to increase in density and performance of electronic devices, heat dissipation in multilayer assembly has to be managed carefully especially close to the heat sources. Heat transfer can be improved with the implementation of a heat spreader such as a thermally conductive thin film. However, their elaboration is critical since the obtained thermal conductivities are very sensitive to synthesis condition and growth mechanism of thin film which involve various crystalline qualities and microstructures. Pulsed photothermal technique is one of the few techniques that can provide thin film high thermal conductivity measurement. Nevertheless, due to the very small involved time scales about 50 to 100 ns for heat transfer inside such a thin film, one has to be very careful in order to avoid several bias during parameter estimation. This work will present the effect of various heat flux evolution showing that traditional use of a Dirac function in the thermal model based on quadrupole technique, and which is used for the parameter estimation, induces noticeable bias in the estimated thin film thermal conductivity reaching up to 20% for a thin film of 180 W.m-1.K-1 k value. This study was performed using simulated data computed using finite element software and considering aluminum nitride thin films deposited on glass or sapphire substrates. Finally, a high thermal conductivity values around 143 W.m-1.K-1 was measured for a 2 μm aluminum nitride thin film deposited on a sapphire substrate using a magnetron sputtering technique.

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