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ISSN Online: 2377-424X

ISBN Print: 978-1-56700-474-8

ISBN Online: 978-1-56700-473-1

International Heat Transfer Conference 16
August, 10-15, 2018, Beijing, China
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REDUCED WORKING TEMPERATURE OF QUANTUM DOTS-LIGHTEMITTING DIODES BY QDS@SILICA-ON-CHIP STRUCTURE

Get access (open in a dialog) DOI: 10.1615/IHTC16.ctm.022857
pages 3919-3926
Bin Xie
School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
YanHua Cheng
School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Xingjian Yu
State Key Laboratory of Coal Combustion and Thermal Packaging Laboratory, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Bofeng Shang
State Key Laboratory of Coal Combustion and Thermal Packaging Laboratory, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Kai Wang
School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Xiaobing Luo
State Key Laboratory of Coal Combustion and Thermal Packaging Laboratory, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

Abstract

Quantum dots-converted white light-emitting diodes (QDs-WLEDs) are considered as next generation artificial light source by virtue of high luminous efficiency (LE) and excellent color rendering index (CRI). While, QDs' poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve these problems, here we proposed a separated QSNs/phosphor structure, composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QDs@silica nanoparticles (QSNs) based WLEDs present 16.7 % higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs' temperature can reach 11.5 °C, 21.3 °C and 30.3 °C at driving current of 80 mA, 200 mA and 300 mA, respectively.
KEY WORDS: Heat transfer enhancement, Electronic equipment cooling, Light-emitting diodes, quantum dots