ISSN Online: 2377-424X
ISBN Print: 978-1-56700-421-2
International Heat Transfer Conference 15
Study of Thermal Characteristics of Power Mosfet Package under Body-Diode and Saturate Test Conditions
Abstrakt
The distribution of heat flux in power MOSFET package is significantly affected by the effective heating area of MOSFET chip. Under different operation conditions, effective heating area changes depending on MOSFET’s working condition. In case when MOSFET works in saturation region (Vth < Vgs < Vth+Vds) hot spot occurs at channel pinch-off area which makes package’s thermal resistance higher than in linear region or its body-diode mode. This article studies thermal resistance change and gives numerical result based on thermal transient test on two popular commercial MOSFET packages. Calibrated CFD simulation model is also used to visualize heat flux distribution inside package and discuss how it affects package’s thermal characteristics.