Abo Bibliothek: Guest

ISSN Online: 2377-424X

ISBN Print: 978-1-56700-474-8

ISBN Online: 978-1-56700-473-1

International Heat Transfer Conference 16
August, 10-15, 2018, Beijing, China

HIGH THERMAL CONDUCTIVITY THIN FILM FOR HEAT SPREADING ENHANCEMENT IN MICROELECTRONIC MEASURED USING SHORT PULSED PHOTOTHERMAL TECHNIQUE

Get access (open in a dialog) DOI: 10.1615/IHTC16.nmt.024428
pages 7099-7106

Abstrakt

Due to increase in density and performance of electronic devices, heat dissipation in multilayer assembly has to be managed carefully especially close to the heat sources. Heat transfer can be improved with the implementation of a heat spreader such as a thermally conductive thin film. However, their elaboration is critical since the obtained thermal conductivities are very sensitive to synthesis condition and growth mechanism of thin film which involve various crystalline qualities and microstructures. Pulsed photothermal technique is one of the few techniques that can provide thin film high thermal conductivity measurement. Nevertheless, due to the very small involved time scales about 50 to 100 ns for heat transfer inside such a thin film, one has to be very careful in order to avoid several bias during parameter estimation. This work will present the effect of various heat flux evolution showing that traditional use of a Dirac function in the thermal model based on quadrupole technique, and which is used for the parameter estimation, induces noticeable bias in the estimated thin film thermal conductivity reaching up to 20% for a thin film of 180 W.m-1.K-1 k value. This study was performed using simulated data computed using finite element software and considering aluminum nitride thin films deposited on glass or sapphire substrates. Finally, a high thermal conductivity values around 143 W.m-1.K-1 was measured for a 2 μm aluminum nitride thin film deposited on a sapphire substrate using a magnetron sputtering technique.