Abo Bibliothek: Guest

ISSN Online: 2377-424X

ISBN Print: 978-1-56700-474-8

ISBN Online: 978-1-56700-473-1

International Heat Transfer Conference 16
August, 10-15, 2018, Beijing, China

VOLTAGE DEPENDENCE OF HOT SPOT TEMPERATURE ON SIC POWER MOSFET WITH ELECTRO-THERMAL ANALYSIS

Get access (open in a dialog) DOI: 10.1615/IHTC16.ctm.024140
pages 4079-4085

Abstrakt

This paper describes the relationship between nano-micro scale hot-spot temperature and applied voltage of SiC power MOSFET. Recently, thermal problems become more serious in power electronics area, because power consumption of power electronics has been increased by sophisticated the electronics. The size and weight of the power module should be reduced for saving space and energy, especially in car electronics. Then, in power electronics, precise thermal management is required. In this paper, the dependence of applied voltage on the nano-micro scale hot spot temperature in SiC power MOSFET is discussed for precise thermal management.