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ISSN Online: 2377-424X

ISBN CD: 1-56700-226-9

ISBN Online: 1-56700-225-0

International Heat Transfer Conference 13
August, 13-18, 2006, Sydney, Australia

THERMAL CONDUCTANCE OF Au-OCTANEDITHIOL-GaAs JUNCTIONS

Get access (open in a dialog) DOI: 10.1615/IHTC13.p8.190
9 pages

Résumé

The thermal conductance of Au-octanedithiol-GaAs molecular junctions fabricated by a rigid stamp-rigid substrate version of nanotransfer printing was measured. This process requires external pressure to promote contact at the gold-octanedithiol interface during the spontaneous formation of permanent Au-S bonds. Correspondingly, the interfacial thermal conductance was measured as a function of fabrication pressure from 60−160 MPa. Measurements using the 3ω technique indicate that regardless of the applied fabrication pressure, the thermal conductance of the Au-octanedithiol-GaAs junction is 24 ± 4 MW/m2·K. Scotch-tape adhesion tests on the junction indicate the presence of permanent Au-S bonds and that the junction is mechanically dominated by bridging octanedithiol molecules.