ライブラリ登録: Guest

ISSN Online: 2377-424X

ISBN CD: 1-56700-226-9

ISBN Online: 1-56700-225-0

International Heat Transfer Conference 13
August, 13-18, 2006, Sydney, Australia

COMPUTATIONAL FLUID DYNAMICS STUDY ON THE GAAS MOVPE PROCESS FOR MULTISCALE ANALYSIS

Get access (open in a dialog) DOI: 10.1615/IHTC13.p11.70
8 pages

要約

Film growth rate profiles of GaAs MOVPE process were analyzed using computational fluid dynamics method as a successive work of the multi-scale analysis, which combined the micro-scale analysis using a selective-area method and the reactor-scale macro analysis. The film growth process in a horizontal reactor using trimethylgallium (TMGa) and tertiarybutylarsine was considered. Film growth rate profiles according to the various susceptor temperatures and total flow rates were predicted and analyzed to elucidate the responsible species for the film growth. The results show that the monomethylgallium is the major route for the film deposition but the deposition from the TMGa is important in the upstream region of the reactor.