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ISSN Online: 2377-424X

ISBN Print: 1-56032-797-9

International Heat Transfer Conference 11
August, 23-28, 1998, Kyongju, Korea

SIMULATION AND OPTIMIZATION OF LOW PRESSURE CHEMICAL VAPOR DEPOSITION BATCH FURNACES FOR MICROELECTRONICS MANUFACTURING

Get access (open in a dialog) DOI: 10.1615/IHTC11.180
pages 105-110

Аннотация

A two-dimensional axisymmetric model for low pressure chemical vapor deposition (LPCVD) in a multiwafer batch reactor has been linked with an optimization analysis. The LPCVD model includes a rigorous description of multicomponent species transport, gas phase chemistry, surface chemistry, and convective heat transfer. The model has been designed to execute rapidly on a small computer workstation so that it may be used by semiconductor manufacturing companies to optimize LPCVD processes.
The model has been used to simulate the deposition of silicon dioxide films from tetraethoxysilane (TEOS) reactant gas. Predictions from the model are in good agreement with reactor deposition data from a commercial reactor. Simulations have been performed to explore optimum furnace temperature distributions and flowrates required to produce uniform deposition across the wafer stack in the furnace.