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ISSN Online: 2377-424X

ISBN Print: 978-1-56700-421-2

International Heat Transfer Conference 15
August, 10-15, 2014, Kyoto, Japan

Heat Transfer across a Confined Thin Film with Structural or Mass Disorder: a Molecular Dynamics Study

Get access (open in a dialog) DOI: 10.1615/IHTC15.nmm.009391
pages 5579-5587

Аннотация

The structure of a thin film confined between two materials widely exists in microelectronic devices. When heat flows across such a thin film, thermal resistance of the film is always coupled with the thermal resistance of the two interfaces. Comparing to numerous studies on the heat transfer across an interface between two dissimilar materials and the heat transfer across an individual thin film, the relationship of the three resistances is seldom discussed in literature. Using molecular dynamics simulations, we systematically investigate the net thermal resistance of two interfaces and the confined thin film with film thickness up to 20 nm. Our results indicate that when the thin film is crystalline, the total thermal resistance is smaller than that predicted by thermal circuit model in diffuse limit. In contrast, when the film has structural disorder (amorphous) or mass disorder, net thermal resistance is evidently larger than the prediction from thermal circuit model in diffuse limit, except the cases that the thin film is only a few atomic layers thick. We also find that for disordered thin film, thermal resistance is almost linearly dependent on the thickness and can still be described by the thermal circuit model if a modified thin film thermal conductivity is employed.