Connexion utilisateur Panier
Abonnement à la biblothèque: Guest
Page d'accueil Archives Thermal Letter Responsables Réunions à venir Assembly for International Heat Transfer Conferences
International Heat Transfer Conference 12
2002, 18-23 August, Grenoble, France

Impact of the material properties on the coupling thermal and electrical analysis of semiconductor devices

Get access DOI: 10.1615/IHTC12.3940
6 pages

Résumé

The performance and the reliability of microelectronic devices strongly depend on the local temperature rise. Prediction of the local temperature field in the devices needs coupling analysis with the electrical behavior. Although previous studies have revealed the characteristics of the interactions between the thermal and electrical fields, they have not considered the effect of the layers such as dielectric materials and metallic wires on the device analysis. The present study deals with the effect of these layers on the thermal and electrical performance of GaAs MESFET. The calculated results show the temperature distribution in the device structure and indicate the importance of considering these layers.
Page d'accueil Archives Thermal Letter Responsables Réunions à venir Assembly for International Heat Transfer Conferences French English Русский 中文 Português Spain German Aide Contactez-nous Retour à Begell House