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ISSN Online: 2377-424X

ISBN Print: 978-1-56700-474-8

ISBN Online: 978-1-56700-473-1

International Heat Transfer Conference 16
August, 10-15, 2018, Beijing, China

THE INFLUENCE OF RELATED PARAMETERS TO THERMAL CONDUCTIVITY DETERMINATION VIA TIME-DOMAIN THERMOREFLECTANCE METHOD UNDER HIGH PRESSURE

Get access (open in a dialog) DOI: 10.1615/IHTC16.tpm.023584
pages 8881-8889

Résumé

Thermal transport properties under high pressures are key problems in many research fields, such as thermal physics, geophysics, materials science and high temperature superconductivity. Due to the great difficulty in the measurement of high pressure, the experimental study on the thermal properties under high pressure is seldom. The combination of time-domain thermoreflectance(TDTR) method and diamond anvil cell (DAC) is one of the most suitable systems for thermal conductivity measurement under high pressure. But TDTR method obtains one or two unknown parameters by fitting the experimental data with the theoretical heat transfer equation where the values of other related parameters are known, such as the thickness of the transducer layer, the thermal conductivity and volumetric heat capacity of the transducer layer and the pressure transmitting medium, etc. However, the true values of these parameters under high pressure state are usually unknown, which are often replaced by the atmospheric pressure values or the values acquired from the extrapolation method in the process of data fitting. This inevitably introduces errors to the experimental results. In this paper, we investigate the influence of the related parameters to thermal conductivity determination of Si under 2 GPa pressure. The results demonstrate that the volumetric heat capacity of the silicon sample is the only key parameter for extracting the thermal conductivity. This conclusion will simplify the data processing and increase accuracy of measurements.