Inscrição na biblioteca: Guest

ISSN Online: 2377-424X

ISBN Print: 978-1-56700-421-2

International Heat Transfer Conference 15
August, 10-15, 2014, Kyoto, Japan

Study of Thermal Characteristics of Power Mosfet Package under Body-Diode and Saturate Test Conditions

Get access (open in a dialog) DOI: 10.1615/IHTC15.min.009775
pages 4813-4820

Resumo

The distribution of heat flux in power MOSFET package is significantly affected by the effective heating area of MOSFET chip. Under different operation conditions, effective heating area changes depending on MOSFET’s working condition. In case when MOSFET works in saturation region (Vth < Vgs < Vth+Vds) hot spot occurs at channel pinch-off area which makes package’s thermal resistance higher than in linear region or its body-diode mode. This article studies thermal resistance change and gives numerical result based on thermal transient test on two popular commercial MOSFET packages. Calibrated CFD simulation model is also used to visualize heat flux distribution inside package and discuss how it affects package’s thermal characteristics.