Chemical mechanical polishing (CMP) is a vital process in semiconductor manufacturing that removes over-deposited materials and ensures both local and global planarization. The temperature is an essential parameter in CMP, but current commercial polishers lack thermal management systems. Therefore, developing a thermal management system requires understanding the temperature variation and its effect on the different consumables involved in the overall polishing process. Various metrology methods have shown that the pad surface temperature rises within 60 seconds, and the highest temperature recorded is approximately 55 °C. The slurry flow rate and pad-wafer contact behavior are fundamental factors influencing pad surface temperature variation. When the temperature rises, the slurry viscosity and pad hardness decrease, but colloidal silica particles aggregate into larger particles. Compression and shear in polishing flatten the pad surface, and the asperity is restored to its original shape at high temperatures due to polyurethane's shape-memory property. Different temperature slurries were used to polish amorphous silicon dioxide and copper films. The removal rate of amorphous silicon dioxide remained constant regardless of the slurry temperature. However, for copper polishing, the 60 °C slurry had a 71.35 % higher average removal rate than the 23 °C slurry. Practical temperature and ideal temperature variation curves were established to demonstrate the task of a thermal management system for future design. This research helps establish a recipe for polishing process temperature and can reduce the time and cost of polishing.