Yunhui Wu
Laboratoire EM2C, CNRS, CentraleSupelec, Universite Paris-Saclay, 3 Rue Joliot Curie, 91190 Gif-sur-Yvette, France
Roman Anufriev
Institute of Industrial Science, The University of Tokyo, 153-8505, Tokyo, Japan
Sergei Gluchko
Institute of Industrial Science, The University of Tokyo, 153-8505, Tokyo, Japan
Ryoto Yanagisawa
Institute of Industrial Science, The University of Tokyo, 153-8505, Tokyo, Japan
Laurent Tranchant
Laboratoire d’ Energétique Moléculaire et Macroscopique, Combustion, UPR CNRS 288, Ecole Centrale Paris, Grande Voie des Vignes, 92295 Chatenay-Malabry, France; Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan
Atsushi Noguchi
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo,
Meguro-ku, Tokyo 153-8904, Japan
Koji Usami
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo,
Meguro-ku, Tokyo 153-8904, Japan
Masahiro Nomura
LIMMS, CNRS-IIS UMI 2820, The University of Tokyo, Tokyo 153-8505, Japan; Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan; PRESTO, Japan Science and Technology Agency, Saitama, 332–0012, Japan
Sebastian Volz
LIMMS/CNRS-IIS(UMI2820), Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan; Laboratoire d'Energétique Moléculaire et Macroscopique, Combustion, UPR CNRS 288, CentraleSupélec, Université Paris-Saclay, Bat. Eiffel, 3, rue Joliot Curie, 91192 Gif-sur-Yvette cedex - France
Theoretical calculations of the heat flux carried by phonons-polaritons along a SiN thin film are provided and show the possible predominance of the latter on the heat flux via phonons. We then experimentally measure the effective in-plane thermal conductivity of amorphous SiN thin films and show that it can indeed be increased by surface phonon-polaritons (SPhPs) significantly when the film thickness scales down. The thermal
conductivity of the 100nm thick film is found to be 2.5W/(mK) higher than the one of the 200nm thick film at 500K